| PART |
Description |
Maker |
| CBS05F30 CBS05F30-14 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| HSB88WA |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| HSB88WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| 1SS286 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
Schottky Barrier Diodes for Detection and Mixer
|
HITACHI[Hitachi Semiconductor]
|
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CD214A-B40 CD214A-B40L CD214A-B220 CD214A-B30 CD21 |
Schottky Barrier Diodes 2A, VR=60V 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC
Schottky Barrier Rectifier Chip Diode
|
Bourns, Inc.
BOURNS[Bourns Electronic Solutions]
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
